发明名称 Manufacturing method of semiconductor device
摘要 Performing electrolysis plating to a wiring is made possible, aiming at the increasing of pin count of a semiconductor device. Package substrate 3 by which ring shape common wiring 3p for electric supply was formed in the inner area of bonding lead 3j in device region 3v of main surface 3a is used. Since a plurality of first plating lines 3r and fourth plating lines 3u for electric supply connected to common wiring 3p can be arranged by this, the feeder for electrolysis plating can be arranged to all the land parts on the back. Hereby, it becomes possible to perform electrolysis plating to the wiring of main surface 3a of package substrate 3, and the back surface. Even if the land part of plural lines is formed covering the perimeter of the back surface, electrolysis plating can be performed to the all land parts. As a result, electrolysis plating can be performed to a wiring, aiming at the increasing of pin count of a semiconductor device.
申请公布号 US7915086(B2) 申请公布日期 2011.03.29
申请号 US20090545964 申请日期 2009.08.24
申请人 RENESAS ELECTRONICS CORPORATION 发明人 TANOUE TETSUHARU
分类号 H01L21/44 主分类号 H01L21/44
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