发明名称 |
Method of fabricating a semiconductor device, and semiconductor device with a conductive member extending through a substrate and connected to a metal pattern bonded to the substrate |
摘要 |
A method of fabricating a semiconductor device includes providing a semiconductor substrate having an active surface, thinning the substrate by removing material from a second surface of the substrate opposite the active surface, bonding a metal carrier to the second surface of the thinned substrate, forming a via opening in the thinned substrate, forming a conductive member in the via opening, and patterning the metal carrier bonded to the second surface of the thinned substrate to form a metal pattern.
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申请公布号 |
US7915710(B2) |
申请公布日期 |
2011.03.29 |
申请号 |
US20080222004 |
申请日期 |
2008.07.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JONG HO;LEE DONG HO;AHN EUN CHUL;KWON YONG CHAI |
分类号 |
H01L23/538 |
主分类号 |
H01L23/538 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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