发明名称 Method of fabricating a semiconductor device, and semiconductor device with a conductive member extending through a substrate and connected to a metal pattern bonded to the substrate
摘要 A method of fabricating a semiconductor device includes providing a semiconductor substrate having an active surface, thinning the substrate by removing material from a second surface of the substrate opposite the active surface, bonding a metal carrier to the second surface of the thinned substrate, forming a via opening in the thinned substrate, forming a conductive member in the via opening, and patterning the metal carrier bonded to the second surface of the thinned substrate to form a metal pattern.
申请公布号 US7915710(B2) 申请公布日期 2011.03.29
申请号 US20080222004 申请日期 2008.07.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JONG HO;LEE DONG HO;AHN EUN CHUL;KWON YONG CHAI
分类号 H01L23/538 主分类号 H01L23/538
代理机构 代理人
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