发明名称 |
Monolithic integrated composite device having silicon integrated circuit and silicon optical device integrated thereon, and fabrication method thereof |
摘要 |
Provided is a monolithic integrated composite device including: a silicon substrate which is partitioned into a silicon integrated circuit forming region and a silicon optical device forming region; a buried oxide layer which is formed locally in the silicon substrate of the silicon optical device forming region and isolates unit devices of the silicon optical device forming region; an overlay layer formed locally on the buried oxide layer; a silicon optical device formed in the silicon optical device forming region using the silicon overlay layer; a silicon integrated circuit formed in the silicon integrated circuit forming region of the silicon substrate; and wiring connecting the silicon integrated circuit and the silicon optical device or connecting the silicon optical devices or connecting the silicon integrated circuits.
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申请公布号 |
US7915700(B2) |
申请公布日期 |
2011.03.29 |
申请号 |
US20070441377 |
申请日期 |
2007.04.03 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
SUH DONGWOO;KIM GYUNGOCK |
分类号 |
H01L31/0232;H01L23/58 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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