发明名称 |
Semiconductor on insulator (SOI) device including a discharge path for a decoupling capacitor |
摘要 |
A silicon on insulator (SOI) device is provided. The device includes an MOS capacitor coupled between voltage busses and formed in a monocrystalline semiconductor layer overlying an insulator layer and a semiconductor substrate. The device includes at least one electrical discharge path for discharging potentially harmful charge build up on the MOS capacitor. The MOS capacitor has a conductive electrode material forming a first plate of the MOS capacitor and an impurity doped region in the monocrystalline silicon layer beneath the conductive electrode material forming a second plate. A first voltage bus is coupled to the first plate of the capacitor and to an electrical discharge path through a diode formed in the semiconductor substrate and a second voltage bus is coupled to the second plate of the capacitor.
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申请公布号 |
US7915658(B2) |
申请公布日期 |
2011.03.29 |
申请号 |
US20100727027 |
申请日期 |
2010.03.18 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
PELLELA MARIO M.;WU DONGGANG D.;BULLER JAMES F. |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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