NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A nitride semiconductor light emitting device and a method for manufacturing the same are provided to improve light output by including a nitride based semiconductor layer which is grown with lateral epitaxy. CONSTITUTION: A sacrificial layer with a high wet etching property is formed on a sapphire substrate(210). A porous protection layer(230) is formed on a sacrificial layer and epitaxially grows a semiconductor layer. A low temperature growth nitride based semiconductor layer is formed on the porous protection layer. A high temperature growth nitride based semiconductor layer(250) is formed on the low temperature growth nitride based semiconductor layer. The substrate is separated from the nitride based semiconductor layer by wet-etching the sacrificial layer and the porous protection layer.