发明名称 |
Semiconductor probe structure using impact-ionization metal oxide semiconductor device, information storing device therewith and manufacturing method thereof |
摘要 |
A method of manufacturing a probe includes: forming a first slant face of the probe through an anisotropic etching process using a first etching mask pattern formed on a silicon substrate; forming a first semiconductor electrode region; forming a second etching mask pattern in an opposite direction of the first etching mask pattern on the silicon substrate; forming a spacer layer on a side wall of the second etching mask pattern; forming a second slant face of the probe; forming a second semiconductor electrode region; forming a silicon oxide layer pattern on the resulting silicon substrate; forming spacer layers on both side walls of the silicon oxide layer pattern; and etching the silicon substrate to a predetermined depth.
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申请公布号 |
US7915109(B2) |
申请公布日期 |
2011.03.29 |
申请号 |
US20070957575 |
申请日期 |
2007.12.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION |
发明人 |
KO HYOUNG SOO;PARK BYUNG GOOK;HONG SEUNG BUM;PARK CHUL MIN;CHOI WOO YOUNG;KIM JONG PIL;SONG JAE YOUNG;KIM SANG WAN |
分类号 |
H01L21/336;H01L21/8234 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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