LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A light emitting device and a method for fabricating the same are provided to improve reliability and productivity by forming a layer controlling etch depth due from PEC etching on a part of the semiconductor. CONSTITUTION: In a light emitting device and a method for fabricating the same, an emitting device comprises an N type semiconductor layer, an active layer, and a p-type semiconductor layer. The N type semiconductor layer comprises a first N type semiconductor layer(55a), a second N type semiconductor layer(55b), and a third N type semiconductor layer(55c). The first N type semiconductor layer has a horn thereon. A second N-type semiconductor layer is contacted with the first N-type semiconductor layer and has the doping concentration which is relatively lower than that of the first N-type semiconductor layer. A third N-type semiconductor layer is contacted with the second N-type layer and the active layer.