| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to improve light sensitivity by shortening a focal distance between a micro lens and a photo diode. CONSTITUTION: A semiconductor substrate includes a pixel area with a unit pixel(20) and a peripheral circuit area. A lower insulation layer includes a lower wiring formed on the semiconductor substrate to be connected to the pixel area and the peripheral circuit area. An upper insulation layer includes an upper wiring to be connected to the lower wiring of the peripheral circuit area on the lower insulation layer. A first trench is formed on the upper insulation layer of the pixel area. A second trench is formed on the lower insulation layer under the first trench. A color filter(60) is formed in a second trench. A micro lens(72) is formed in the first trench to correspond to the color filter.
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