发明名称 Protection register for a phase-change memory
摘要 A memory device including a memory array comprising a set of phase change memory cells configured to store data. The memory device further includes a protection register including a set of protection cells configured to store protection information of the memory cells. The protection cells of the protection register are memory cells of the memory array.
申请公布号 US7916526(B2) 申请公布日期 2011.03.29
申请号 US20080346504 申请日期 2008.12.30
申请人 STMICROELECTRONICS S.R.L. 发明人 DONZE ENZO MICHELE;POLIZZI SALVATORE;KOMOTO GREG
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
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