发明名称 Surface acoustic wave resonator and surface acoustic wave device in which spurious responses that occur when a SiO2 protective film is provided are suppressed
摘要 A surface acoustic wave resonator includes a rotated Y-cut quartz substrate with a cut angle &thetas; of about −53° to about −52° and an IDT electrode made of aluminum or an alloy primarily including aluminum provided on the quartz substrate. The propagation direction of surface acoustic waves is within a range of about 90°±5° with respect to the X axis. A SiO2 film is arranged to cover the quartz substrate and the IDT electrode. The thickness of the IDT electrode is in a range of about 6.0% to about 6.5% of λ, where λ is the wavelength of surface acoustic waves, and the duty ratio of the IDT electrode is in a range of about 0.62 to about 0.66.
申请公布号 US7915784(B2) 申请公布日期 2011.03.29
申请号 US20090470549 申请日期 2009.05.22
申请人 MURATA MANUFACTURING CO., LTD. 发明人 KIDOH HIDEO
分类号 H03H9/25 主分类号 H03H9/25
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