发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A semiconductor device includes: an isolation region formed in a semiconductor substrate; active regions surrounded by the isolation region and including p-type and n-type regions, respectively; an NMOS transistor formed in the active region including the p-type region and including an n-type gate electrode; a PMOS transistor formed in the active region including the n-type region and including a p-type gate electrode; and a p-type resistor formed on the isolation region. The p-type resistor has an internal stress greater than that of the p-type gate electrode.
|
申请公布号 |
US7915131(B2) |
申请公布日期 |
2011.03.29 |
申请号 |
US20100914026 |
申请日期 |
2010.10.28 |
申请人 |
PANASONIC CORPORATION |
发明人 |
NAKAGAWA RYO;YAMADA TAKAYUKI |
分类号 |
H01L21/336;H01L21/76;H01L21/8238 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|