发明名称 |
Method and apparatus for depositing a magnetoresistive multilayer film |
摘要 |
This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.
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申请公布号 |
US7914654(B2) |
申请公布日期 |
2011.03.29 |
申请号 |
US20070688739 |
申请日期 |
2007.03.20 |
申请人 |
ANELVA CORPORATION |
发明人 |
DJAYAPRAWIRA DAVID DJULIANTO;TSUNEKAWA KOJI;NAGAI MOTONOBU |
分类号 |
C23C14/35;G11B5/127;G11B5/39;G11B5/851;H01F10/30;H01F10/32;H01F41/14;H01F41/18;H01F41/30;H01L21/8246;H01L27/105;H01L43/08;H01L43/12 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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