| 摘要 |
A TMR effect element with sufficiently reduced element resistance and restricted popping noise is provided, which comprises a tunnel barrier layer formed primarily of a metal oxide including many electric charge sites. The electric charge sites density n and the mobility μ of electrons trapped due to the electric charge sites satisfy a relationship expressed by: 0<(ns1−1−ns2−1)−1·(μ0−μ)·(nμ)−1<0.2, where ns1 and ns2 are densities of tunnel electrons when an element resistance is a minimum and maximum respectively during reading signals and μ0 is the mobility of electrons when not trapped.
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