发明名称 Substrate having pattern and method for manufacturing the same, and semiconductor device and method for manufacturing the same
摘要 The present invention provides a method for manufacturing a substrate having a pattern that is capable of controlling the distance between adjacent film patterns, and also provides a method for manufacturing a substrate, particularly, having a pattern with a narrow width and a thickness that is capable of controlling the width between the film patterns. The present invention provides a method for manufacturing a substrate having a conductive film that serves as an antenna with a little variation in inductance and has a large electromotive force, and provides a method for manufacturing a semiconductor device with high yield. After forming a film in which silicon and oxygen are combined and an inactive group is combined with the silicon over a substrate, an insulating film, or a conductive film, a composition is printed by the printing method thereover, and is baked to form a film pattern.
申请公布号 US7915058(B2) 申请公布日期 2011.03.29
申请号 US20060334474 申请日期 2006.01.19
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 AOKI TOMOYUKI;DAIRIKI KOJI
分类号 H01L21/00 主分类号 H01L21/00
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