发明名称 Substrate mounting table for plasma processing apparatus, plasma processing apparatus and insulating film forming method
摘要 A substrate mounting table includes an electrostatic chuck for attracting and holding a target substrate and a base for holding the electrostatic chuck thereon. The base includes a protruding portion having a large height; and an outer peripheral surface provided around the protruding portion at a position lower than the protruding portion by a preset height. A thermally sprayed film having a thickness equivalent to a height difference between the protruding portion and the outer peripheral surface is deposited on the outer peripheral surface such that the thermally sprayed film becomes continuous with the protruding portion. The electrostatic chuck is formed by installing an electrode between insulating members, and the electrostatic chuck is fixed to the base by using an adhesive to cover a boundary between a top surface of the protruding portion and a surface of the thermally sprayed film.
申请公布号 US7913987(B2) 申请公布日期 2011.03.29
申请号 US20090366215 申请日期 2009.02.05
申请人 TOKYO ELECTRON LIMITED 发明人 SUZUKI TAKASHI;YASUDA KANAME;YAMASAKI RYO
分类号 B23Q3/00 主分类号 B23Q3/00
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