发明名称 RADIATION-EMITTING SEMICONDUCTOR CHIP HAVING PROTECTION AGAINST ELECTROSTATIC DISCHARGES AND CORRESPONDING PRODUCTION METHOD
摘要 A radiation-emitting semiconductor chip includes: a carrier and a semiconductor body with a semiconductor layer sequence including an active region that generates radiation, a first semiconductor layer and a second semiconductor layer; wherein the active region is arranged between the first semiconductor layer and the second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the semiconductor body comprises at least one recess which extends through the active region; the first semiconductor layer is electrically conductively connected to a first connection layer extending in the recess from the first semiconductor layer in a direction of the carrier; and the first connection layer is electrically connected to the second semiconductor layer via a protective diode.
申请公布号 KR20110031897(A) 申请公布日期 2011.03.29
申请号 KR20107020375 申请日期 2009.06.25
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 ENGL KARL;HAHN BERTHOLD;STREUBEL KLAUS;KLEIN MARKUS
分类号 H01L27/15;H01L33/36;H01L33/62 主分类号 H01L27/15
代理机构 代理人
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