发明名称 |
RADIATION-EMITTING SEMICONDUCTOR CHIP HAVING PROTECTION AGAINST ELECTROSTATIC DISCHARGES AND CORRESPONDING PRODUCTION METHOD |
摘要 |
A radiation-emitting semiconductor chip includes: a carrier and a semiconductor body with a semiconductor layer sequence including an active region that generates radiation, a first semiconductor layer and a second semiconductor layer; wherein the active region is arranged between the first semiconductor layer and the second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the semiconductor body comprises at least one recess which extends through the active region; the first semiconductor layer is electrically conductively connected to a first connection layer extending in the recess from the first semiconductor layer in a direction of the carrier; and the first connection layer is electrically connected to the second semiconductor layer via a protective diode. |
申请公布号 |
KR20110031897(A) |
申请公布日期 |
2011.03.29 |
申请号 |
KR20107020375 |
申请日期 |
2009.06.25 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
ENGL KARL;HAHN BERTHOLD;STREUBEL KLAUS;KLEIN MARKUS |
分类号 |
H01L27/15;H01L33/36;H01L33/62 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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