发明名称 Magnetic tunnel transistor having a base structure that provides polarization of unpolarized electrons from an emitter based upon a magnetic orientation of a free layer and a self-pinned layer
摘要 A magnetic tunnel transistor (MTT) is formed having an emitter that is configured to provide unpolarized electrons. A composite base is configured to provide polarization of the unpolarized electrons injected into the base by the emitter based upon a magnetic orientation of the free layer and the self-pinned layer of the base.
申请公布号 US7916435(B1) 申请公布日期 2011.03.29
申请号 US20070760911 申请日期 2007.06.11
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. 发明人 GILL HARDAYAL SINGH
分类号 G11B5/33 主分类号 G11B5/33
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