发明名称 |
ACTIVE ZONE OF GENERATOR ON SEMICONDUCTOR STRUCTURE |
摘要 |
FIELD: information technology. ^ SUBSTANCE: active zone is superlattice made in form of a heterostructure from AIIIBV type compounds and provides periodic variation of energy of the bottom of the conduction band of the structure. The superlattice has a lattice constant d, consisting of one potential quantum well and a narrow potential barrier whose width is 3-20 times less than the width of the potential quantum well. The working transition in the active zone when voltage is applied is the transition between the Wannier-Stark ground level in one potential quantum well and the first Wannier-Stark excited level in the well, lying at a distance of two or more superlattice constants d. ^ EFFECT: possibility of frequency tuning in a wide range owing to change in the applied voltage. ^ 4 dwg |
申请公布号 |
RU2415502(C1) |
申请公布日期 |
2011.03.27 |
申请号 |
RU20090142681 |
申请日期 |
2009.11.18 |
申请人 |
UCHREZHDENIE ROSSIJSKOJ AKADEMII NAUK INSTITUT FIZIKI MIKROSTRUKTUR RAN |
发明人 |
MARMALJUK ALEKSANDR ANATOL'EVICH;PADALITSA ANATOLIJ ALEKSEEVICH;ANDRONOV ALEKSANDR ALEKSANDROVICH;DODIN EVGENIJ PETROVICH;ZINCHENKO DMITRIJ IGOREVICH;NOZDRIN JURIJ NIKOLAEVICH |
分类号 |
H01S5/343 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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