| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a nonvolatile memory device suppressing generation of pattern collapse or pattern short-circuit between adjacent memory cells in a lower part of the memory cells when a laminated film containing a resistance change layer and a rectifying layer is processed to form a columnar memory cell. SOLUTION: The method for manufacturing a nonvolatile memory device comprises the steps of: forming a laminate containing a rectifying layer 21 and a resistance change layer 22 and an insulating film 24 on a first interlayer dielectric 10 in which a first wiring 11 is formed; forming a resist pattern where a pattern with a memory cell-forming position opened is two-dimensionally disposed on a position where the first wiring 11 is formed; etching the insulating film 24 using the resist pattern to form an opening; embedding a conductive material film in the opening to form a mask film 23; etching the insulating film 24, the rectifying layer 21 and the resistance change layer 22 by dry etching using the mask film 23 as a mask to form memory cells; and embedding a second interlayer dielectric between the memory cells and forming a second wiring such that the second wiring is in contact with the upper surface of each memory cell. COPYRIGHT: (C)2011,JPO&INPIT
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