| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of accurately forming a resistor even in a boundary region with a LOCOS (local oxidation of silicon) oxide film to have the accurate resistor and to obtain a space saving. SOLUTION: A method for manufacturing a semiconductor device to which a resistor 50 is formed on the surface of a semiconductor substrate 10 having a LOCOS oxidation film 20 includes: a step of forming a polysilicon film for forming a boundary polysilicon film 40 along the boundary so as to cover the boundary between the LOCOS oxidation film 20 and the semiconductor substrate 10; a step of forming the resistor for forming the resistor 50 by injecting an impurity on the surface of the semiconductor substrate 10 with the boundary polysilicon film 40 as a mask; and a step of forming a contact for forming not less than two contact holes 71 on the resistor 50 and forming an interconnection layer 70 to which the contact holes 71 are not directly connected each other. COPYRIGHT: (C)2011,JPO&INPIT
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