| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus using SiC and having a high breakdown voltage, a low on-resistance, and excellent reliability. SOLUTION: A semiconductor apparatus has a silicon carbide substrate having first and second main surfaces, a first silicon carbide layer of a first conductive type provided on the first main surface of the silicon carbide substrate, a first silicon carbide region of a second conductive type formed on a surface of the first silicon carbide layer, a second silicon carbide region of the first conductive type formed on a surface of the first silicon carbide region, a third silicon carbide region of the second conductive type formed on a surface of the first silicon carbide region, a fourth silicon carbide region of the second conductive type formed between the facing first silicon carbide regions with the first silicon carbide layer therebetween, a gate insulating film formed continuously on surfaces of the first silicon carbide region, the first silicon carbide layer, and the fourth silicon carbide region, a gate electrode formed on the gate insulating film, an interlayer insulating film which covers the gate electrode, a first electrode which is electrically connected to the second silicon carbide region and the third silicon carbide region, and a second electrode formed on the second main surface of the silicon carbide substrate. COPYRIGHT: (C)2011,JPO&INPIT |
