发明名称 |
SINGLE PHOTORESIST APPROACH FOR HIGH CHALLENGE PHOTO PROCESS |
摘要 |
A method of lithography patterning includes coating a resist layer on a substrate; performing an exposing process to the resist layer using a lithography tool with a numerical aperture tuned between about 0.5 and about 0.6; baking the resist layer; thereafter performing a first developing process to the resist layer for a first period of time; and performing a second developing process to the resist layer for a second period of time.
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申请公布号 |
US2011070546(A1) |
申请公布日期 |
2011.03.24 |
申请号 |
US20090562248 |
申请日期 |
2009.09.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
PAN HUNG-TING;CHEN JING-HUAN;MA WEI-CHUNG;CHIANG HSIN-CHUN;CHENG PO-CHUNG;WU SZU-AN |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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