| 发明名称 |
METHOD FOR FORMATION OF METAL SILICIDE FILM |
| 摘要 |
<p>A method for forming a metal silicide film, comprising: a step of providing a substrate having a silicon part formed on the surface thereof (step 1); a step of forming a metal film on the surface of the silicon part by CVD using a nitrogen-containing metal compound as a film formation raw material (step 2); and a step of subjecting the substrate to an annealing treatment in a hydrogen gas atmosphere to cause the reaction between the metal film and the silicon part, thereby forming a metal silicide (step 3).</p> |
| 申请公布号 |
WO2011033903(A1) |
申请公布日期 |
2011.03.24 |
| 申请号 |
WO2010JP64071 |
申请日期 |
2010.08.20 |
| 申请人 |
JP;JP;JP;JP |
发明人 |
SUZUKI MIKIO;NISHIMORI TAKASHI;YUASA HIDEKI |
| 分类号 |
H01L21/28;C23C16/42;H01L21/285 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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