| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, wherein an air gap is selectively formed on a predetermined wiring layer by correctly controlling the depth of a through-hole. SOLUTION: The semiconductor device 100 includes: a semiconductor substrate 1 with a semiconductor element; the air gap 101 that is formed on the semiconductor device 1 around wirings 10a, 10b, 10c and 10d, or the wirings 10c and 10d; a wiring structure with consecutive through-hole 102 on the air gap 101; and a through-hole stopper 103 formed under the through-hole 102. COPYRIGHT: (C)2011,JPO&INPIT
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