| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for effectively avoiding contact between a heat shielding plate and a silicon melt, and to provide a production apparatus for a single crystal silicon achieving the method. SOLUTION: The method for producing a single crystal silicon 17 by Czochralski process is provided, comprising: disposing at least two rod pins 15 different in length at the lower end 140 of a heat shielding plate 14; raising a crucible 4 until the longest rod pint 15A touches a silicon melt S in the crucible 4 and determining the gap between the lower end 140 of the heat shielding plate 14 and the silicon melt S at the contact time as a reference; descending the crucible 4 until the gap reaches an initial set value; and subsequently pulling a single crystal silicon 17 from the silicon melt S to grow the single crystal silicon 17. In the growing step, when the shortest rod pin 15B touches the silicon melt S, at least elevation of the crucible 4 is stopped so as to avoid contact between the heat shielding plate 14 and the silicon melt S. The production apparatus 1 for a single crystal silicon can carry out the production method. COPYRIGHT: (C)2011,JPO&INPIT
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