| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for electric power which has a high-speed switching function, and can solve a problem that during switching, a displacement current flows and a high voltage is generated by resistance of a displacement current path, thereby a breakdown of a thin insulating film such as a gate insulating film and an insulation breakdown of the semiconductor device are occurred by the voltage. SOLUTION: The semiconductor device can reduce a resistance between a first well region and a source pad in a part where a shape of a boundary of a first well region is concave and decrease a voltage generated resulting from displacement current during switching, because well contact hole per unit length for peripheral boundary of the first well region in a part where a shape of a boundary of a second conductive type first well region formed on a part of a surface of a first conductive type drift layer formed on a first main surface of a first conductive type semiconductor substrate is concave are arranged more than that in a part where a shape of boundary of the first well region is linear as viewed from above. COPYRIGHT: (C)2011,JPO&INPIT
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