发明名称 PHOTOMASK DESIGNING METHOD AND PHOTOMASK DESIGNING PROGRAM
摘要 In one embodiment, a photomask designing method for creating a pattern layout having an assist pattern placed around a design pattern is disclosed. The method can place a plurality of evaluation points around the design pattern and set an evaluation index for imaging properties of the design pattern on an imaging surface. The method can combine a light intensity distribution of the design pattern with light intensity distributions of the evaluation points to obtain a light intensity distribution on the imaging surface and evaluate the light intensity distribution on the imaging surface using the evaluation index to determine a region having an effective evaluation point placed. In addition, the method can determine a placement condition for the assist pattern based on the region where the effective evaluation point is placed and place the assist pattern around the design pattern based on the placement condition to create the pattern layout.
申请公布号 US2011072402(A1) 申请公布日期 2011.03.24
申请号 US20100850082 申请日期 2010.08.04
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KAI YASUNOBU
分类号 G06F17/50;G03F1/36;G03F1/68;G03F1/70 主分类号 G06F17/50
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