发明名称 |
Methods of Operating Nonvolatile Memory Devices to Inhibit Parasitic Charge Accumulation Therein |
摘要 |
Methods of operating a charge trap nonvolatile memory device include operations to erase a first string of nonvolatile memory cells by selectively erasing even-numbered nonvolatile memory cells in the first string and then selectively erasing the odd-numbered nonvolatile memory cells in the first string, which may be interleaved with the even-numbered nonvolatile memory cells. This operation to selectively erase the even-numbered nonvolatile memory cells may include erasing the even-numbered nonvolatile memory cells while simultaneously biasing the odd-numbered nonvolatile memory cells in a blocking condition that inhibits erasure of the odd-numbered nonvolatile memory cells. The operation to selectively erase the odd-numbered nonvolatile memory cells may include erasing the odd-numbered nonvolatile memory cells while simultaneously biasing the even-numbered nonvolatile memory cells in a blocking condition that inhibits erasure of the even-numbered nonvolatile memory cells.
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申请公布号 |
US2011069543(A1) |
申请公布日期 |
2011.03.24 |
申请号 |
US20100956357 |
申请日期 |
2010.11.30 |
申请人 |
LEE CHANG-HYUN;CHOI JUNG-DAL;LIM YOUNG-HO;SUH KANG-DEONG |
发明人 |
LEE CHANG-HYUN;CHOI JUNG-DAL;LIM YOUNG-HO;SUH KANG-DEONG |
分类号 |
G11C16/16;G11C16/04 |
主分类号 |
G11C16/16 |
代理机构 |
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地址 |
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