| 摘要 |
<p>Disclosed is an MOSFET having a new structure wherein a start-up voltage of a built-in diode is reduced and deterioration of a withstand voltage in the reverse direction in a Schottky barrier diode is suppressed by having the Schottky barrier diode, instead of a PN junction, in the MOSFET. A low start-up voltage and a low switching loss are achieved by having the Schottky barrier diode as the built-in diode. Namely, in a p-type well, n+ source regions and p+ source regions are alternately disposed within a same plane, and a trench-type source electrode which is in contact with both the regions on the side surface of the electrode is formed. Thus, the Schottky barrier diode having the trench-type source electrode as a metal electrode is formed, the start-up voltage of the diode is reduced, and an increase of the area occupied by the MOSFET and the diode is reduced, while suppressing deterioration of the withstand voltage in the reverse direction by alternately disposing the n+ source regions and the p+ source regions in the source region in the p-type well.</p> |
