| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To boost a bit line to a higher level than a power supply voltage without using any booster circuit and without utilizing an inter-bit line capacitance in a NAND string to which a plurality of electrically rewritable nonvolatile memory cells are connected in series. <P>SOLUTION: The semiconductor memory device includes a cell array where one end of each NAND string is connected to a bit line and the other ends are connected to a cell source line in common. The channel of a write-inhibited cell charged to a power supply voltage via the bit line at an initial stage of a writing sequence, is boosted to the power supply voltage or more by capacitive coupling from the cell source line. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
