发明名称 METHOD FOR PRODUCING SILICON CARBIDE MEMBER
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide member having the surface of high degree of smoothness. SOLUTION: The method for producing the silicon carbide member comprises the steps of: subjecting theβ-type silicon carbide member to surface treatment; and heat-treating theβ-type silicon carbide member subjected to surface treatment at 1,400-1,900°C in an atmosphere containing Si to promote the grain growth of silicon carbide on the surface of theβ-type silicon carbide member. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011057519(A) 申请公布日期 2011.03.24
申请号 JP20090210530 申请日期 2009.09.11
申请人 BRIDGESTONE CORP 发明人 ONISHI TADASHI
分类号 C01B31/36 主分类号 C01B31/36
代理机构 代理人
主权项
地址
您可能感兴趣的专利