| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that prevents a silicide short circuit without increasing the difference in a height between a word gate and a control gate, and to provide a method of manufacturing the same. SOLUTION: The nonvolatile semiconductor memory device includes: a word gate 3 formed on a semiconductor substrate 1 via a gate insulating film 2 and having a projecting part 3b in which a part having a fixed width projects upwardly; a control gate 5 provided on a sidewall surface of the word gate 3 via an ONO film 4; each insulating sidewall 7 respectively formed on a sidewall surface of the control gate 5 and a sidewall surface of the projecting part 3b of the word gate 3; and each silicide layer 9 respectively formed on an upper surface of the projecting part 3b of the word gate 3 and part of a surface of the control gate 5. The width of the projecting part 3b is smaller than that of the word gate 3 below the projecting part 3b. COPYRIGHT: (C)2011,JPO&INPIT |
