| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive image sensor with a global shutter function that can achieve high-picture-quality imaging. SOLUTION: An MOS image sensor includes: a pixel part 21 including a photoelectric conversion part PD, a write transistor WT including a floating gate FG for storing electric charges accumulated in the PD, and a readout transistor RT; a vertical drive scanning circuit 3 which performs control to reset electric charges of PDs of respective pixel parts 21 at the same time, to erase electric charges of FGs of the respective pixel parts 21 at the same time before the resetting ends, to accumulates electric charges, present in PDs right after the end of the resetting, in the FGs, to read out a dark-time signal corresponding to a threshold voltage of an RT of each pixel part 21 after the electric charge accumulation, to accumulate electric charges, accumulated in the PDs during an exposure period started after the resetting, in the FGs, and to read out an exposure signal corresponding to the threshold of an RT of each pixel part 21 after the accumulation; a memory 8 for storing the dark-time signal after conversion by an AD conversion part; and a noise removing circuit 6 which determines a difference between the exposure signal after the conversion by the AD conversion part and the dark-time signal stored in the memory 8. COPYRIGHT: (C)2011,JPO&INPIT
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