| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device complying with specifications of a power supply voltage applied from outside. SOLUTION: In the method of manufacturing the semiconductor device, at least one of a channel ion implantation step, a gate oxide film formation step, and a gate electrode patterning step is carried out in a step of forming an element operative at a first power supply voltage when a first semiconductor device is manufactured which is supplied with the first power supply voltage from outside to operate or in a step of forming an element operative at a second power supply voltage when a second semiconductor device is manufactured which is supplied with the second power supply voltage from outside to operate. Further, a diffusion region formation step is carried out in common to manufacture the first semiconductor device and to manufacture the second semiconductor device. COPYRIGHT: (C)2011,JPO&INPIT
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