| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile storage device in which the number of steps to form a contact provided at the same device of structure where a word line or a bit line is used in common among memory cells neighboring in the height direction has been reduced in comparison with that in a conventional device. SOLUTION: The nonvolatile storage device is formed in the structure that a memory cell part 100 where a memory layer including the variable resistance type memory cells arranged in a shape of a matrix is laminated in a plurality of layers in the height direction is formed at intersecting locations of the bit lines BL and the word lines WL formed in different heights and directions in the memory cell forming region R<SB>M</SB>on the second interlayer insulating film 30, the contacts WC, BC connecting the second wire 35 and the third wire 91 formed on the interlayer insulating film 60 are formed in the contact forming region R<SB>C</SB>, and a conductive material is embedded to contact with holes of the contacts WC, BC to which contact forming grooves of equal aperture diameters corresponding to the memory layers are connected continuously in the depth direction. COPYRIGHT: (C)2011,JPO&INPIT
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