| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device that can have a contact plug easily formed on an upper electrode of a ferroelectric capacitor, and suppresses breakage of a hydrogen barrier film over the ferroelectric capacitor. SOLUTION: The semiconductor storage device includes a plurality of transistors provided on a semiconductor substrate 10, a first interlayer insulating film ILD1 provided on the plurality of transistors, a plurality of ferroelectric capacitors C provided on the first interlayer insulating film ILD1, a first hydrogen barrier film HB1 covering upper surfaces and side faces of the plurality of ferroelectric capacitors C, a second interlayer insulating film ILD2 provided over the ferroelectric capacitors C and buried having a gap or hole H between two adjacent ferroelectric capacitors C, a cover insulating film CI covering over the second interlayer insulating film ILD2 to close the gap or an opening of the hole H, and a second hydrogen barrier film HB2 covering over the cover insulating film CI. COPYRIGHT: (C)2011,JPO&INPIT
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