| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device which can remove excessive raw material molecules adsorbed on a substrate surface or the like in a short time, and has high productivity, and to provide a substrate treatment apparatus. SOLUTION: The method comprises: a first step where, upon substrate treatment, a raw material gas comprising a prescribed element is fed into a substrate treatment chamber stored with a substrate so as to form a film comprising the prescribed element onto the substrate; a second step where an inert gas is fed into the substrate treatment chamber so as to remove the raw material gas remaining in the substrate treatment chamber; a third step where a reformed gas reacted with the above prescribed element is fed into the substrate treatment chamber so as to reform a film comprising the prescribed elements which has been formed on the substrate by the first step; and a fourth step where an inert gas is fed into the substrate treatment chamber so as to remove the modified gas remaining in the substrate treatment chamber. Before the second step and the fourth step, an inert gas filling step of filling an inert gas into a gas storage part connected to the substrate treatment chamber is performed, and, in the second step and the fourth step, the inert gas filled into the gas storage part by the inert gas filling step is fed into the substrate treatment chamber. COPYRIGHT: (C)2011,JPO&INPIT |
