| 摘要 |
An example method for writing and reading data in electrically erasable and programmable nonvolatile memory (EEPROM) cells may include writing, in erased blocks of a first memory zone, data each having a logical address defined in relation to a virtual memory; writing, in a second memory zone, metadata structures associated with the data present in the first memory zone, configuring, in a volatile memory zone, for each logical address of a data stored in the first memory zone, addresses of metadata structures comprising the logical address, reading the look-up table and then reading metadata structures that the look-up table designates, to find, from the logical address of a data, an address in the first memory zone of a block containing a valid data having the logical address.
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