METHOD OF MANUFACTURING ALUMINUM-CONTAINING NITRIDE INTERMEDIATE LAYER, METHOD OF MANUFACTURING NITRIDE LAYER, AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an aluminum-containing nitride intermediate layer capable of having a nitride layer with superior crystallinity formed thereover with good reproducibility, a method of manufacturing the nitride layer, and a method of manufacturing a nitride semiconductor element using the nitride layer.

SOLUTION: The present invention relates to the method of manufacturing the aluminum-containing nitride intermediate layer that employs at least one of conditions of (i) setting the shortest distance between a center of a surface of a target and a growth surface of a substrate to 100 to 250 mm, (ii) using a nitrogen gas as a gas to be supplied to a DC magnetron sputtering device, and (iii) arranging the target obliquely to the growth surface of the substrate when the aluminum-containing nitride intermediate layer 2 is laminated by a DC magnetron sputtering method of applying a voltage in a DC-continuous manner; the method of manufacturing the nitride layer; and the method of manufacturing the nitride semiconductor element using the nitride layer.

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