| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem in a technique of manufacturing a semiconductor image sensor, wherein a manufacturing process becomes complicated in the image sensor using a multilayer film interference filter requiring the complicated manufacturing process, thereby the yield is deteriorated, and also solve the problem in terms of an application where an application range is narrowed. SOLUTION: A two-layer structure comprising a first transparent layer and a second transparent layer is provided in a pixel area of the image sensor, and a refractive index and a thickness of each transparent layer are selected, thus providing different light transmissive wavelength characteristics for each pixel. COPYRIGHT: (C)2011,JPO&INPIT |
