发明名称 SUBSTRATE PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing device that can uniformly heat a gas supply unit and shorten switching times of operations for gas supply, replacement, and discharge, etc. SOLUTION: The substrate processing device that supplies a processing gas to a substrate 26 to perform predetermined processing on the substrate includes: a reaction container 8 comprising a container body 9 and a lid 11 for closing the container body from above; a substrate mounting part 16 where the substrate is mounted; a heating part 27 for heating the substrate; and the gas supply unit 2 for supplying the processing gas from above the reaction container, wherein a recessed part 17 is formed on an upper surface of the lid, the gas supply unit is stored in the recessed part, and the gas supply unit and lid are united together. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011060812(A) 申请公布日期 2011.03.24
申请号 JP20090205667 申请日期 2009.09.07
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TANABE MITSUAKI
分类号 H01L21/31;C23C16/44;C23C16/455;H01L21/205 主分类号 H01L21/31
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