| 摘要 |
PROBLEM TO BE SOLVED: To prevent degradation of a yield due to a short circuit between wires by preventing degradation of a margin of the depth of focus due to a hard mask film and degradation of visibility of an alignment mark, and allowing a self-alignment via to be formed, and to improve an insulation property between wires to improve reliability thereof. SOLUTION: In this method for manufacturing a semiconductor device, an interlayer insulation film 12 including at least one layer of insulation film is formed on a substrate 10; a first mask film 16 is formed on the interlayer insulation film 12 to be embedded; a second mask film 17 is formed on the interlayer insulation film 12 and the first mask film 16; a via hole 19 is formed on the interlayer insulation film 12 using the second mask film 17; wiring grooves 20 are formed on the interlayer insulation film 12 using the first mask 16; a conductive material is embedded in the via hole 19 and the wiring grooves 20; and thereby a via and wiring are formed. COPYRIGHT: (C)2011,JPO&INPIT
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