发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a substrate processing apparatus that can improve productivity by shortening a cleaning time. SOLUTION: The method of manufacturing the semiconductor device includes repeating a process of forming a thin film on a substrate by supplying a first gas capable of depositing a film alone and a second gas incapable of depositing a film alone into a processing container respectively through a first and a second nozzle part raised from a lower part to an upper part in the processing container, and flowing downward and exhausting them from an exhaust port provided to a lower part of the processing container; and then supplying a cleaning gas into the processing container through a third nozzle part provided to a ceiling wall of the processing container and the first nozzle part and supplying the cleaning gas downward, and exhausting it from the exhaust port to remove deposits sticking in the processing container and first nozzle part. COPYRIGHT: (C)2011,JPO&INPIT
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申请公布号 |
JP2011060937(A) |
申请公布日期 |
2011.03.24 |
申请号 |
JP20090207931 |
申请日期 |
2009.09.09 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
YAMAMOTO TAKAHARU |
分类号 |
H01L21/318;C23C16/44;H01L21/3065;H01L21/31 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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