发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A semiconductor memory device of an embodiment includes: a cathode electrode formed of a p-type semiconductor material; a resistance change film being in contact with the cathode electrode; and an anode electrode being contact with the resistance change film.
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申请公布号 |
US2011068314(A1) |
申请公布日期 |
2011.03.24 |
申请号 |
US20100790320 |
申请日期 |
2010.05.28 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAKAHASHI KENSUKE;SHIGEOKA TAKASHI |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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