The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increase the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of 7 to 11. The invention further provides a method of polishing a substrate with the polishing composition.
申请公布号
WO2011034808(A2)
申请公布日期
2011.03.24
申请号
WO2010US48587
申请日期
2010.09.13
申请人
CABOT MICROELECTRONICS CORPORATION;REISS, BRIAN;CLARK, JOHN;JONES, LAMON;GILLILAND, JEFFREY;WHITE, MICHAEL
发明人
REISS, BRIAN;CLARK, JOHN;JONES, LAMON;GILLILAND, JEFFREY;WHITE, MICHAEL
