| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of providing a crystal having a desired plane orientation by solid-phase epitaxial growth. <P>SOLUTION: The method of manufacturing a semiconductor device includes steps of: forming an amorphous layer 13 partially on a silicon substrate 11 having a first plane orientation; and irradiating the amorphous layer 13 with microwaves to convert the amorphous layer 13 into a crystal layer having a first plane orientation. <P>COPYRIGHT: (C)2011,JPO&INPIT |
| 申请公布号 |
JP2011061072(A) |
申请公布日期 |
2011.03.24 |
| 申请号 |
JP20090210550 |
申请日期 |
2009.09.11 |
| 申请人 |
TOSHIBA CORP |
发明人 |
AOYAMA TOMONORI;MIYANO KIYOTAKA |
| 分类号 |
H01L21/20;H01L21/02;H01L21/336;H01L21/8238;H01L27/092;H01L29/786 |
主分类号 |
H01L21/20 |
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