| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide correction methods for a photomask capable of correcting an auxiliary pattern of the photo mask, when the auxiliary pattern is resolved on a surface to be transferred by a reliable and compatibly easy method in the photo mask having an ArF excimer laser as an exposure light source and having the auxiliary pattern used for projection exposure by means of deformation illumination, and to provide a corrected photomask. <P>SOLUTION: In the correction method of a photomask, when the auxiliary pattern 13 is resolved in the surface to be transferred by the projection exposure in the photo mask 10 having a main pattern 12 transferred to the surface to be transferred and the auxiliary pattern 13 formed in the vicinity of the main pattern 12 on one principal surface of a transparent substrate 11, etching or grinding of the surface the auxiliary pattern 13 which is resolved is performed; and the film thickness of the auxiliary pattern 13 which is resolved is made thin, until the auxiliary pattern 13 is not resolved on the surface to be transferred. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
