发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce impedance errors caused by parasitic resistance between an output terminal and unit buffers. SOLUTION: A semiconductor device includes: an output terminal DQ; unit buffers 111-11n; and a plurality of output wiring paths for respectively connecting the unit buffers 111-11n with the output terminal DQ. Each output wiring path has each individual output wiring part 161P-16nP, 161N-16nN individually assigned to each corresponding unit buffer. The unit buffers corresponding to the output wiring paths are connected to the output terminal DQ without via common output wiring parts that are common output wiring parts shared by the output wiring paths and have higher resistance value than that of the individual output wiring parts. By this, it suppresses impedance errors caused by parasitic resistance between the output terminal DQ and the unit buffers 111-11n. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011061580(A) 申请公布日期 2011.03.24
申请号 JP20090210199 申请日期 2009.09.11
申请人 ELPIDA MEMORY INC 发明人 KUWAHARA SHUNJI;FUJISAWA HIROKI
分类号 H03K19/0175;H01L21/822;H01L27/04;H03K19/0948 主分类号 H03K19/0175
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