发明名称 |
FORMING RADIO FREQUENCY INTEGRATED CIRCUITS |
摘要 |
Method of forming a radio frequency integrated circuit (RFIC) is provided. The RFIC comprises one or more electronic devices formed in a semiconductor substrate and one or more passive devices on a dielectric substrate, arranged in a stacking manner. Electrical shield structure is formed in between to shield electronic devices in the semiconductor substrate from the passive devices in the dielectric substrate. Vertical through-silicon-vias (TSVs) are formed to provide electrical connections between the passive devices in the dielectric substrate and the electronic devices in the semiconductor substrate.
|
申请公布号 |
US2011068433(A1) |
申请公布日期 |
2011.03.24 |
申请号 |
US20090566338 |
申请日期 |
2009.09.24 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
KIM JONGHAE;HENDERSON BRIAN M.;NOWAK MATTHEW M.;XU JIAYU |
分类号 |
H01L25/16;H01L21/02;H01L21/50 |
主分类号 |
H01L25/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|