| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory circuit small in its circuit scale and a voltage detector circuit incorporating it. <P>SOLUTION: An NMOS transistor 21 turns off when loading and writing and turns on when reading. An NMOS transistor 22 turns on at a high level input and turns off at a low level input. An NMOS transistor 23 turns off when loading and writing and turns on when reading. A PMOS transistor 26 turns on when loading and turns off when writing and reading. A PMOS transistor 27 turns off at a high level input and turns on at a low level input when loading, and turns on when writing and reading. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
